The challenge lies in ensuring uniform wafer thickness, requiring nanoscale precision in laser focus depth. Thus, Si LAL developed a hybrid laser system, achieving 100 percent domestic control over hardware and software and placing China at the global forefront of SiC wafer production.

The results showed that the company can produce 15 to 16 500-μm-thick wafers in every 1-cm-thick ingot. The time required for each wafer has been reduced to 15 minutes, and material loss has been reduced to 15 percent. The cost per wafer has been slashed by more than 20 percent, and the yield rate exceeds 99 percent.